to-92mod plastic-encapsulate transistors 2SB560 transistor ( pnp ) features z high reverse voltage z low saturation voltage z suitable universal af power amplifier use maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.7 a p c collector power dissipation 900 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v (br)cbo i c = -10 ua, i e =0 -100 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma, i b =0 -80 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -20 v , i e =0 -1 a collector cut-off current i ebo v eb = -4v , i b =0 -1 a h fe(1) v ce = -5v, i c = -50ma 60 560 dc current gain h fe(2) v ce = -5v, i c = -500ma 30 collector-emitter saturation voltage v ce(sat) i c =-500 ma, i b = -50ma -0.3 -0.8 v base-emitter saturation voltage v be(sat) i c =-500 ma, i b = -50ma -0.85 -1.2 v transition frequency f t v ce =-10v, i c =-50ma 100 mhz out capacitance cob v cb = -10 v ,f=1mh z 15 pf classification of h fe(1) rank d e f g range 60 - 120 100 - 200 160 - 320 280 - 560 to-92mod 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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